High-Linearity, 815MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
V CC to GND ...........................................................-0.3V to +5.5V
RF (RF is DC shorted to GND through a balun)..................50mA
LO1, LO2 to GND ..................................................-0.3V to +0.3V
IF+, IF- to GND ...........................................-0.3V to (V CC + 0.3V)
TAP to GND ...........................................................-0.3V to +1.4V
LOSEL to GND ...........................................-0.3V to (V CC + 0.3V)
LOBIAS to GND..........................................-0.3V to (V CC + 0.3V)
RF, LO1, LO2 Input Power* ............................................+20dBm
Continuous Power Dissipation (T C = +85°C) (Note A)
20-Pin Thin QFN-EP................................................................5W
θ JA (Note B)....................................................................+38°C/W
θ JC .................................................................................+13°C/W
Operating Temperature Range (Note C) ....T C = -40°C to +85°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note A: Based on junction temperature T J = T C + ( θ JC x V CC x I CC ). This formula can be used when the temperature of the
exposed paddle is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150°C.
Note B: Junction temperature T J = T A + ( θ JA x V CC x I CC ). This formula can be used when the ambient temperature of the EV kit
PCB is known. The junction temperature must not exceed +150°C. See the Applications Information section for details.
Note C: T C is the temperature on the exposed paddle of the package. T A is the ambient temperature of the device and PCB.
*Maximum reliable continuous input power applied to the RF, LO, and IF ports of this device is +15dBm from a 50 Ω source.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V CC = +4.75V to +5.25V, no RF signals applied, T C = -40°C to +85°C. IF+ and IF- are DC grounded through
an IF balun. Typical values are at V CC = +5V, T C = +25°C, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
SYMBOL
V CC
I CC
CONDITIONS
MIN
4.75
TYP
5.00
85
MAX
5.25
100
UNITS
V
mA
LOSEL Input Logic-Low
LOSEL Input Logic-High
Input Current
V IL
V IH
I IH , I IL
2
±0.01
0.8
V
V
μA
AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, C5 = 3.3pF, L1 and C4 not used, V CC = +4.75V to +5.25V, RF and LO ports are driven from 50 Ω sources,
P LO = -3dBm to +3dBm, P RF = 0dBm, f RF = 815MHz to 1000MHz, f LO = 570MHz to 900MHz, f IF = 90MHz, f LO < f RF , T C = -40°C to
+85°C, unless otherwise noted. Typical values are at V CC = +5V, P LO = 0dBm, f RF = 920MHz, f LO = 830MHz, f IF = 90MHz,
T C = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
RF Frequency Range
LO Frequency Range
IF Frequency Range
LO Drive
SYMBOL
f RF
f LO
f IF
P LO
CONDITIONS
(Note 2)
(Note 2)
External IF transformer dependence (Note 2)
(Note 2)
MIN
815
570
DC
-3
TYP
MAX
1000
900
250
+3
UNITS
MHz
MHz
MHz
dBm
LO2 selected, P LO = +3dBm, T C = +25°C,
f RF = 920MHz to 960MHz, f LO = 830MHz to
870MHz
48
53
LO1-to-LO2 Isolation (Note 3)
LO1 selected, P LO = +3dBm, T C = +25°C,
dB
f RF = 920MHz to 960MHz, f LO = 830MHz to
870MHz
50
56
Maximum LO Leakage at RF Port
P LO = +3dBm
-17
dBm
Maximum LO Leakage at IF Port
P LO = +3dBm, f RF = 920MHz to 960MHz,
f LO = 830MHz to 870MHz (Note 3)
-29.5
-23
dBm
2
_______________________________________________________________________________________
相关PDF资料
MAX2031EVKIT EVAL KIT FOR MAX2031
MAX2032ETP+ IC MIXER UP/DOWN CONVER 20TQFN
MAX2034CTM+ IC AMP LOW NOISE QUAD 48-TQFN
MAX2035EVKIT EVAL KIT FOR MAX2035
MAX2039ETP+D IC MIXER UP/DWN HI LIN 20-TQFN
MAX2039EVKIT EVAL KIT FOR MAX2039
MAX2041ETP+T IC MIXER UP/DWN HI LIN 20-TQFN
MAX2041EVKIT EVAL KIT FOR MAX2041
相关代理商/技术参数
MAX2029ETP-T 功能描述:射频混合器 .815GHz-1GHz Up/Down Mixer RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube
MAX2029EVKIT 制造商:Maxim Integrated Products 功能描述:HIGH-LINEARITY 815MHZ TO 1000MHZ U - Rail/Tube
MAX202C 制造商:TI 制造商全称:Texas Instruments 功能描述:5-V DUAL RS-232 LINE DRIVER/RECEIVER WITH +-15KV ESD PROTECTION
MAX202C/D 功能描述:RS-232接口集成电路 RoHS:否 制造商:Exar 数据速率:52 Mbps 工作电源电压:5 V 电源电流:300 mA 工作温度范围:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体:LQFP-100 封装:
MAX202C/D DIE 制造商:Maxim Integrated Products 功能描述:
MAX202CD 功能描述:RS-232接口集成电路 5V Dual Line Driver/Receiver RoHS:否 制造商:Exar 数据速率:52 Mbps 工作电源电压:5 V 电源电流:300 mA 工作温度范围:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体:LQFP-100 封装:
MAX202CD 制造商:Texas Instruments 功能描述:LINE DRIVER DUAL 5V SMD SOIC16
MAX202CD 制造商:Texas Instruments 功能描述:IC RS-232 TRANSCEIVER 5V SOIC-16 制造商:Texas Instruments 功能描述:IC, RS-232 TRANSCEIVER, 5V, SOIC-16